TPD1039S 2006-10-31 1 toshiba intelligent power device silicon monolithic power mos ic TPD1039S low-side switch for motor, solenoid and lamp drive TPD1039S is a monolithic power ic for low-side switch. the ic has a vertical mosfet output which can be directly driven from a cmos or ttl logic circuit (e.g., an mpu). the ic offers intelligent self-protection functions. features ? a monolithic power ic with a new structure combining a control block and a vertical power mosfet ( -mos) on a single chip. ? can directly drive a power load from a cmos or ttl logic. ? built-in protection circuits agai nst overvoltage, overheat, and overcurrent. ? low on-resistance: r ds (on) = 0.25 ? (max) (@v in = 5 v, t ch = 25c) ? package to-92 (mod) can be packed in tape. pin assignment marking that because of its mos struct ure, this product is sensitive to static electricity. weight: 0.36 g (typ.) in drain source marking side 3 2 1 1 0 3 9 s t p d lot number month (starting from alphabet a) year (last number of the christian era)
TPD1039S 2006-10-31 2 block diagram pin description pin no. symbol pin description 1 in input pin. this pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. 2 drain output pin. the current limit for output current is 5 a (typ.) when excessive current flow into a device because of in-rush current and short load of a lamp. 3 source ground pin. timing chart overtemperature detection/protection 1 3 drain in source 2 overcurrent detection /protection input signal current limiting (limiter) overtemperature protection overcurrent output current normal normal overtemperature
TPD1039S 2006-10-31 3 truth table v in v drain state l h h l normal l h h l overcurrent l h h h overtemperature absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds (dc) 45 v drain current i d (dc) 1.5 a input voltage v in ?0.5~6 v power dissipation (ta = 25c) p d 0.9 w single pulse active clamp capability (note 1) e as 20 mj active clamp current i ar 1.5 a repetitive active clamp capability (note 2) e ar 0.09 mj operating temperature t opr ?40~85 c channel temperature t ch 150 (note 3) c storage temperature range t stg ?55~150 c note 1: active clamp capability (single pulse) test condition v dd = 25 v, starting t ch = 25c, l = 10 mh, i ar = 1.5 a, r g = 25 note 2: repetitive rating; pulse width li mited by maximum channel temperature. note 3: overtemperature protection will work when the channel temperature exceeds 125c. be sure to operate the device in such a way that the channel temperature does not exceed 125c. note4: using continuously under heavy loads (e.g. the application of high temperatur e/current/voltage and the significant change in temperature, etc.) may cause this product to decr ease in the reliability significantly even if the operating conditions (i.e . operating temperature/current/volta ge, etc.) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) a nd individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to ambient r th (ch-a) 139 c/w
TPD1039S 2006-10-31 4 electrical characteristics (t ch = 25c) characteristics symbol test circuit test condition min typ. max unit drain-source clamp voltage v (cl) dss ? v in = 0 v, i d = 1 ma 45 ? ? v high level input voltage v ih ? v ds = 10~40 v, i d > = 1 a 3.5 ? 6 v low level input voltage v il ? v ds = 10~40 v, i d < = 10 a ? ? 0.8 v draint cut-off current i dss ? v in = 0 v, v ds = 40 v ? ? 10 a input current i in ? v in = 5 v, at normal operation ? ? 400 a drain-source on resistance r ds (on) ? v in = 5 v, i d = 1 a ? ? 0.25 thermal shutdown (note 4) t s ? v in = 5 v 125 ? ? c overcurrent protection i s ? v in = 5 v ? 5 ? a t on ? 15 ? switching time t off 1 v dd = 24 v, v in = 5 v, r l = 24 ? 45 ? s source-drain diode forward voltage v dsf ? i f = 1.5 a ? 0.9 1.8 v note 4: overtemperature protection will work when the channel temperature exceeds 125c. be sure to operate the device in such a way that the channel temperature does not exceed 125c. the overtemperature protection functi on protects a device from destruction. once started, however, this functi on will operate continuously; device reliability is not guaranteed while the function is in operation. test circuit 1 switching time measuring circuit test circuit measured waveforms 24 v 5 v t off t on 90% 90% 10% 10% v drain waveform v in waveform TPD1039S in drain v v dd = 24 v r l = 24 p.g source
TPD1039S 2006-10-31 5 input current i in ( a) input current i in ( a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) channel temperature t ch (c) v (cl) dss ? t ch drain-source clamp voltage v (cl) dss (v) input voltage v in (v) i d ? v in drain current i d (a) input voltage v in (v) i in ?v in channel temperature t ch (c) i in ? t ch input voltage v in (v) r ds (on) ? v in drain-source on resistance r ds (on) ( ) 2.0 1.6 1.2 0.8 0.4 0 0 0.1 0.2 0.3 0.4 0.5 v in = 3.5 v 4.5 4 5 5.5 6 tc h = 25c 70 60 50 40 30 20 10 0 ? 80 ? 40 0 40 80 120 160 i d = 1 ma 0 1 2 3 4 5 10 0.001 0.01 0.1 1 v ds = 10 v t ch = ? 40c 85 25 200 0 2 4 6 8 160 120 80 40 0 t ch = 25c 250 200 150 100 50 0 300 ? 80 ? 40 0 40 80 120 160 v in = 5 v v in = 5 v t ch = 25c 0 3 2 1 0 2 4 6 8
TPD1039S 2006-10-31 6 overtemperature protection t s (c) overcurrent protection i s (a) drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) ( ) channel temperature t ch (c) r ds (on) ? t ch drain-source on resistance r ds (on) ( ) input voltage v in (v) i s ? v in overcurrent protection i s (a) channel temperature t ch (c) i s ? tch input voltage v in (v) t s ? v in input voltage v in (v) switching time ? v in switching time ( s) 10 1 0.1 0.01 0.5 0.4 0.3 0.2 0.1 0 v in = 5 v t ch = 25c ? 80 ? 40 0 40 80 120 160 0 0.3 0.2 0.1 v in = 6 v 3.5 5 i d = 1 a 10 0 2 4 6 8 8 6 4 2 0 t ch = 25c 10 8 6 4 2 0 ? 80 ? 40 0 40 80 120 160 v dd = 24 v v in = 5 v 0 2 4 6 8 100 120 160 180 140 0 2 4 6 8 0 20 60 80 40 v dd = 24 v r l = 24 t ch = 25c t off t on t f t r
TPD1039S 2006-10-31 7 ambient temperature ta (c) p d ? ta power dissipation p d (w) pulse width t w (s) r th ? t w transient thermal resistance r th (c/w) 2.0 1.6 1.2 0.8 0.4 0 ? 40 0 40 80 120 160 0.001 0.01 1 0.1 10 100 1000 0.3 1 3 10 30 100 300 ta = 25c single pulse
TPD1039S 2006-10-31 8 package dimensions weight: 0.36 g (typ.)
TPD1039S 2006-10-31 9 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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